METHOD OF MEASURING OPTICAL ENERGY ABSORPTION RATIO, APPARATUS FOR MEASURING OPTICAL ENERGY ABSORPTION RATIO, AND THERMAL PROCESSING APPARATUS

摘要

<P>PROBLEM TO BE SOLVED: To provide a thermal processing apparatus preventing a wafer to be processed from being damaged in thermal processing. Ž<P>SOLUTION: Reflection intensity of an unpatterned plain wafer whose reflectance is known and that of a semiconductor wafer to be actually processed are measured using an optical measurement system, and are subjected to spectral resolution processing. Ideal reflection intensity that is to be obtained when an ideal mirror having 100% reflectance is irradiated with a light is calculated from the reflection intensity of the plain wafer having known reflectance. The value of the optical energy absorbed by the plain wafer is calculated from the ideal reflection intensity and the reflection intensity of the plain wafer, and the value of the optical energy absorbed by the wafer to be processed is calculated from the ideal reflection intensity and the reflection intensity of the wafer to be processed. Based on these, the ratio of the optical energy absorbed by the wafer to be processed to that by the plain wafer is calculated. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž