| 摘要 |
An apparatus and method for controlling local deposition rate in a physical vapor deposition process is provided. A magnet bar assembly is disposed inside a sputtering target. The magnet bar assembly comprises a magnet bar, a support member aligned with the magnet bar, and one or more sliding brackets that couple the support member to the magnet bar. Each sliding bracket compresses the magnet bar to the support member, allowing the use of spacers between the support member and the magnet bar to adjust local proximity of the magnet bar to the plasma bombarding the target.
|
