| 摘要 |
PURPOSE: A method for forming the bumps of a semiconductor device is provided to simplify the manufacturing process of the bumps by forming silver bumps through one photolithography process. CONSTITUTION: A passivation layer(204) is applied on the metal pad of a semiconductor substrate. A pad contact(206) is formed on the passivation layer to expose the metal pad. A titanium tungsten(TiW) layer is applied on the passivation including the pad contact. A silver bump layer(210) is applied on the titanium tungsten layer. A silver seed layer and a silver bulk layer are successively stacked to form the silver bump layer. The silver bump layer is patterned to form silver bumps on the upper side of the pad contact. After the silver bump layer is patterned, the exposed titanium tungsten layer is etched. |
