| 摘要 |
<p>PURPOSE: An image sensor and manufacturing method thereof choose the layout broadening the area of the light-receiving region. The fill factor is improved. CONSTITUTION: A device isolating pattern(11) is formed on the semiconductor substrate. The gate electrode(20) is formed in a part the upper part of the active area classified with the device isolating pattern. Impurity is injected selectively and the drain region(13) is formed in one side of the gate electrode. The first insulating layer is formed on the semiconductor substrate in which the gate electrode is formed. The contact electrode(51) which at the same time touches in the gate electrode and drain region is formed.</p> |
