| 摘要 |
PURPOSE: It examines the light in substrate and the contact not open detecting method of the semiconductor device induces N type junction area my photoelectric cell. In the contact plug inside, the lost electronics is recompensed with the secondary electron emission. CONSTITUTION: The second conductive type(40) junction area is formed in the substrate(31) in which the first conductive well(41) is formed. The contact plug(42) is formed on the junction area. The contact plug surface is charged to the positive charge. The light is examined in substrate and the photoelectric cell is created within the junction area. The primary electron is researched from the electron beam emission apparatus in the contact plug charged to the positive charge. The amount of the emitted secondary electron is detected from the contact plug by the primary electron.
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