| 摘要 |
PURPOSE: A bipolar transistor and a manufacturing method thereof are provided to constantly control a breakdown voltage by forming an extended base to constantly maintain a distance between an emitter and a collector. CONSTITUTION: A second conductive base area is formed on the upper area of a first conductive semiconductor substrate(210). Grooves with a step structure are formed in a base area. A poly silicon(240) doped with a first conductive impurity is buried in the grooves with the step structure. An emitter area(230) with the step structure is formed between the poly silicon and the base area. The lower side of the base area is extended to the lower side of the semiconductor substrate.
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