| 摘要 |
PURPOSE: A design method of the semiconductor device reduces the error of the optical proximity correction [optical proximity correction] by the jog pattern. The overlap margin of the metal layer and contact and/or the via hole pattern is improved. CONSTITUTION: A contact layer is at the same time arranged with the poly layer(50). The poly layer, and the library of the metal layer and contact layer are arranged(70). The library of the metal layer is connected(90). The optical proximity correction is applied to the metal layer(110). The expansion pattern for multiplying the overlap margin of the contact layer becomes in the metal layer in which the optical proximity correction is applied to(130).
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