| 摘要 |
PURPOSE: An image sensor and a manufacturing method thereof are provided to improve the sensitivity of the image sensor by maximizing the amount of light which is inputted to a photo diode. CONSTITUTION: A photo diode(62) is formed on a semiconductor substrate. A first interlayer insulation layer(70) is formed on the upper side of the semiconductor substrate including the photo diode. An optical waveguide induces incident light to the photo diode and is formed on the first interlayer dielectric layer. A second interlayer insulation layer(80) includes the optical waveguide and is formed on the upper side of the first interlayer dielectric layer. The metal layers includes an incline to induce the incident to the optical waveguide by reflecting the incident light with a larger incident angle than a total reflection angle and is formed on the side of the upper side of the optical waveguide in the second interlayer dielectric layer.
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