| 摘要 |
PURPOSE: A method for fabricating of a semiconductor device is provided to minimize the loss of tungsten by forming a photoresist pattern in the slope of a topology region. CONSTITUTION: Transistor or a plurality of metal wirings are formed on a semiconductor substrate. An inter-layer insulating film(20) is formed on the semiconductor substrate to define a topology region and a contact hole area. The inter-layer insulating film corresponding to the contact hole area is selectively etched to form the contact hole. The photoresist pattern is formed in the slope potion of the topology region. Tungsten is formed over the inter-layer insulating film including the photoresist pattern. An etch back process is proceed so that only tungsten to be gap-filled remains, and a tungsten plug is formed.
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