| 摘要 |
PURPOSE: A method for forming a capacitor of a semiconductor device is provided to improve electrical characteristics by preventing cracks due to the increase in the thickness of a bottom electrode. CONSTITUTION: A mold dielectric film is formed on a semiconductor substrate having a contact plug. A hole exposing the contact plug by etching a mold insulating layer is formed. A WN film(116) is buried within the hole to form a bottom electrode of a cylindrical shape contacting with the contact plug. Remaining mold dielectric is removed. A dielectric layer is formed on the bottom electrode. A top electrode(120) is formed on the dielectric layer.
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