| 摘要 |
PURPOSE: An image sensor and a manufacturing method thereof are provided to reduce manufacturing costs by providing a CMOS image sensor with a middle size format above an available field size by using an existing photo apparatus. CONSTITUTION: First to fourth image sensing units(110,120,130,140) are arranged left, right, up and down. First to fourth pixel arrays are formed on the first to fourth image sensing units and are adjacent. First to fourth peripheral circuits are formed on the outer side of the first to fourth image sensing units. The second to fourth image sensing units are comprised of the reverse pattern of the first image sensing unit. The first to fourth image sensing units are formed on four dies which are adjacent on the wafer.
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