| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide: a semiconductor light-emitting device with excellent bondability of electrodes; a method of manufacturing the same; and a lamp. <P>SOLUTION: The semiconductor light-emitting device includes a substrate 101, a laminate semiconductor layer 20, one electrode 111 formed on the upper surface 106c of the laminate semiconductor layer 20, and the other electrode 108 formed on a semiconductor layer exposure surface 104c formed by cutting a portion of the laminate semiconductor layer 20. The one electrode 111 includes a transparent electrode 109 having a hole part where the upper surface 106c of the laminate semiconductor layer 20 is exposed on a bottom surface, a bonding layer 110 formed on the bottom surface of the hole part and on the inner wall thereof, and a bonding pad electrode 120 formed to cover the bonding layer 110. <P>COPYRIGHT: (C)2010,JPO&INPIT |
