| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a thin-film transistor manufacturing method that simplifies the process. <P>SOLUTION: The thin-film transistor manufacturing method is configured as follows. An oxide semiconductor film 30 having a shape including a channel formation scheduled region 31A, a source electrode formation scheduled region 32SA, and a drain electrode formation scheduled region 32DA is formed on a gate insulating film 13 so that the whole oxide semiconductor film has the same carrier concentration as that of the channel formation scheduled region 31A. A mask 33 for suppressing heat transfer is formed on the channel formation scheduled region 31A while the oxide semiconductor film 30 is heated at a temperature of≥100°C and≤200°C in the atmosphere. The channel formation scheduled region 31A becomes a channel region, in which the carrier concentration before the heating is maintained, by suppressing heat transfer by the mask 33. Alternatively, regions not covered with the mask 33 on the oxide semiconductor film 30 become a source electrode region and a drain electrode region which respectively have a high carrier concentration and a low resistance by the occurrence of oxygen loss or the like due to the heating. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
