发明名称 LARGE-AREA DIAMOND CRYSTAL SUBSTRATE AND METHOD FOR PRODUCING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a method for producing a good-quality large-area single crystal substrate by bonding a plurality of single crystal diamond substrates having uniform quality to one another by a comparatively simple operation. SOLUTION: The method for producing the large-area substrate consisting of single crystal diamonds comprises: a step (1) of forming a separation layer on a master substrate consisting of single crystal diamonds by ion implantation; a step (2) of separating one or more single crystal diamond layers from the master substrate; a step (3) of placing a plurality of the separated single crystal diamond layers on a flat support in such a state that the side faces of the adjacent single crystal diamond layers are in contact with each other and the separated surface of each single crystal diamond layer from the master substrate is in contact with the surface of the support; a step (4) of growing a single crystal diamond on the plurality of the single crystal diamond layers placed on the support by a vapor phase synthesis method to bond the plurality of the single crystal diamond layers to one another; and a step (5) of turning over the bonded single crystal diamond layers on the support and growing the single crystal diamond by the vapor phase synthesis method to grow the single crystal diamond on the surface separated from the master substrate. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010150069(A) 申请公布日期 2010.07.08
申请号 JP20080328987 申请日期 2008.12.25
申请人 NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE& TECHNOLOGY 发明人 YAMADA HIDEAKI;CHAYAHARA AKIYOSHI;MOKUNO YOSHIAKI;SHIKADA SHINICHI
分类号 C30B33/06;C30B29/04;H01L21/205 主分类号 C30B33/06
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