| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a semiconductor device capable of desirably burying an insulating film between metal wirings while preventing the degradation of a capacitor dielectric film. SOLUTION: The method for producing the semiconductor device includes a process of forming a base insulating film 9 above a silicon substrate (semiconductor substrate) 1, a process of forming capacitors Q1 and Q2 on the base insulating film 9, a process of forming a first interlayer insulating film 68 covering the capacitors Q1 and Q2, a process of forming a first and second wiring grooves 30, 33 and a first and second contact holes 31, 34 downwardly extending from the bottom of the wiring grooves 30, 33 in the first interlayer insulating film 68, a process of burying a first diffusion preventing film 35 and a first copper film 36 (first conductor) in the first and second wiring grooves 30, 33 and the first and second contact holes 31, 34, and a process of annealing the first copper film 36 in a reducing gas containing no hydrogen. COPYRIGHT: (C)2010,JPO&INPIT
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