| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an apparatus for growing a sapphire single crystal, wherein bubbles are hardly incorporated into a sapphire single crystal being grown. Ž<P>SOLUTION: The apparatus for growing a sapphire single crystal includes: a crucible 1 in which a sapphire raw material is filled; a carbon heater 30 having a cylindrical heater part 3 and a disk-like heater part 4 for heating the crucible; a heat insulating space chamber 6 for keeping the crucible warm; insulating cylinders 8 provided at the bottom face part 60 of the heat insulating space chamber 6; and heater electrodes 5 each inserted into the insulating cylinder 8 and connected to each carbon heater so as to supply an electric power, and is constituted so that the sapphire single crystal is produced from a sapphire raw material melt 10 by a rotary pulling method, wherein the thickness of a heat insulating material for constituting the bottom face part 60 of the heat insulating space chamber 6 is set to be ≥90 mm and the distance from the surface of the bottom face part 60 of the heat insulating space chamber 6 to the lower end of the disk-like heater part 4 is set to be ≥10 mm. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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