| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device which can be improved in operation reliability. Ž<P>SOLUTION: The semiconductor memory device includes select transistors ST1 and ST2, memory cell transistors MT, and memory cell units 5. The select transistors ST1 and ST2 include first gate electrodes. The memory cell transistors MT include second gate electrodes with a charge storage layer and a control gate. The memory cell units include a plurality of the cell memory transistors MT connected together in series between the select transistors ST1 and ST2. A distance between the first gate electrodes and a distance between the first gate electrodes and the second gate electrodes are each at least double a distance between second gate electrodes. A surface of the substrate 12 between second gate electrodes is flush with the surface of the substrate 12 between the first gate electrode and second gate electrodes. The surface of the substrate 12 between the first gate electrodes is positioned lower than the surface of the substrate 12 between the first gate electrodes and the second gate electrodes. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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