发明名称 MATERIAL FOR FORMING SILICON-CONTAINING FILM, AND SILICON-CONTAINING INSULATING FILM AND METHOD FOR FORMING THE SAME
摘要 A silicon-containing film-forming material includes at least one organosilane compound shown by the following general formula (1). wherein R1 to R6 individually represent a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, a vinyl group, a phenyl group, a halogen atom, a hydroxyl group, an acetoxy group, a phenoxy group, or an alkoxy group, provided that at least one of R1 to R6 represents a halogen atom, a hydroxyl group, an acetoxy group, a phenoxy group, or an alkoxy group, and n represents an integer from 0 to 3.
申请公布号 US2010174103(A1) 申请公布日期 2010.07.08
申请号 US20080527327 申请日期 2008.02.12
申请人 JSR CORPORATION 发明人 NAKAGAWA HISASHI;NOBE YOUHEI;KATOU HITOSHI;ISHIZUKI KENJI;KOKUBO TERUKAZU
分类号 C07F7/18;C09D7/00;C23C16/00 主分类号 C07F7/18
代理机构 代理人
主权项
地址