| 摘要 |
A magnetic device manufacturing apparatus that increases the unidirectional anisotropy constant (JK). A substrate (S) is placed in a substrate holder (24) in a film formation area (21a), the substrate (S) is heated to a predetermined temperature, and the processing pressure is reduced to 0.1 (Pa) or lower. A target (T2) of which a main component is an element forming the antiferromagnetic layer is sputtered with at least either one of Kr and Xe to form an antiferromagnetic layer. The antiferromagnetic layer includes an L12 ordered phase expressed by compositional formula Mn100-X-MX (where M is at least one element selected from the group consisting of Ru, Rh, Ir, and Pt, and X is 20(atom %)≦̸X≦̸30(atom %)).
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