发明名称 |
REDUCTION OF THRESHOLD VOLTAGE VARIATION IN TRANSISTORS COMPRISING A CHANNEL SEMICONDUCTOR ALLOY BY REDUCING DEPOSITION NON-UNIFORMITIES |
摘要 |
<p>A threshold adjusting semiconductor material, such as a silicon/germanium alloy may be provided selectively for one type of transistors on the basis of enhanced deposition uniformity. For this purpose, the semiconductor alloy may be deposited on the active regions of any transistors and may subsequently be patterned on the basis of a highly controllable patterning regime. Consequently, threshold variability may be reduced.</p> |
申请公布号 |
WO2010076018(A1) |
申请公布日期 |
2010.07.08 |
申请号 |
WO2009EP09307 |
申请日期 |
2009.12.29 |
申请人 |
ADVANCED MICRO DEVICES, INC;AMD FAB 36 LIMITED LIABILITY COMPANY & CO. KG;KRONHOLZ, STEPHAN;OTT, ANDREAS |
发明人 |
KRONHOLZ, STEPHAN;OTT, ANDREAS |
分类号 |
H01L21/8234;H01L21/8238 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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