| 摘要 |
PURPOSE: A semiconductor memory device is provided to perform calibration operation by using a reference voltage outside of a chip. CONSTITUTION: A reference voltage pad(401) receives a reference voltage from the outside of a chip. Calibration resistance portions(403,411) are connected to a calibration node. The calibration resistance portion has resistance which is determined according to a calibration code. A calibration node is connected to an external resistance. Calibration code generation areas(405,417) compare a voltage with a reference voltage of the calibration node. The calibration code generation area generates the calibration code.
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