| 摘要 |
PURPOSE: A manufacturing method of a CMOS image sensor is provided to improve the efficiency of a CMOS image device by reducing the interval between a photo diode and a micro lens. CONSTITUTION: A plurality of photo diodes(12) with a uniform interval are formed in a semiconductor substrate(10). An interlayer insulating film(14) is formed in the front of the semiconductor substrate. An organic compound(15) is formed in the front of the interlayer insulating film. A photoresist is formed on the organic compound. A photoresist pattern(16) is formed by executing an exposure and development on the photoresist.
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