| 摘要 |
PURPOSE: An image sensor and manufacturing method thereof form the optical block pattern by using the dummy pattern of the metal wiring. The generation of the leakage current is minimized and the element reliability is improved. CONSTITUTION: A light receiving element is especially formed in the semiconductor substrate(10) the pixel. The insulating layer(20) is formed in the above semiconductor top of the substrate. The metal wiring(30) is formed on the insulating layer. It is hedged off from the metal wiring and the optical block pattern(31) is formed in the pixel definition. The protective film is formed on the metal wiring and optical block pattern. The micro lens is formed on the protective film correspondingly to the light receiving element.
|
