| 摘要 |
PURPOSE: A manufacturing method of a semiconductor device is provided to variably control a capacitance value by forming a PIP(Polysilicon/Insulator/Polysilicon) capacitor which has at least two capacitance values without an additional process. CONSTITUTION: An element isolation film, which defines an active region on a semiconductor substrate, is formed(S201). A first polysilicon film for a bottom electrode is formed in the upper surface of the product(S203). A first ion injection is executed for the first polysilicon film(S205). A second ion injection is executed for the first polysilicon film of a PIP region by using an ion injection mask pattern(S209). A thermal oxide film where the first polysilicon film is thermally grown and the laminated structure of a second polysilicon film are formed in the PIP region and a HR(High Resistor) region(S213).
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