| 摘要 |
PURPOSE: An image sensor and manufacturing method of the same are provided to minimize the layout area of a capacitor by forming the capacitor through a SOI wafer structure on the same layer as the photo diode into the vertical structure. CONSTITUTION: A first insulation layer(110) is formed on a first substrate(100). A second substrate(120) is formed on the first insulation layer. A first metal layer(132) and a second metal layer(134), passing through the second substrate and the first insulation layer, are formed in a vertical structure. A photo diode and a transistor(140) are formed in the second substrate. More than one of the first and the second substrate includes silicon.
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