| 摘要 |
PURPOSE: An image sensor and a method for manufacturing the same are provided to improve a photo-sensitivity by reducing a distance between a photo-diode and a micro-lens. CONSTITUTION: A first substrate includes an electrical junction region, a transistor, and a wiring. The wiring connects the electrical junction region and the transistor. A second substrate is formed on the first substrate, a photo-diode(210) is formed on the second substrate. The second substrate includes a via-hole and a contact metal(281). The via-hole passes through the second substrate. The contact metal is formed in the via-hole and is connected with the wiring.
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