| 摘要 |
PURPOSE: An LED and a manufacturing method thereof are provided to manufacture a photonics device with low cost on a large sized Si wafer by achieving perfect compatibility with a Si CMOS process. CONSTITUTION: A nano-crystalline is coated in a p-type Si substrate. A surface active agent existing on the surface of the nano-crystalline is removed by processing the substrate with hydro plasma. A TiO2 thin film is deposited on the substrate. The deposition is executed at the temperature of 100~200°C. The nano-crystalline is one among CdSe/ZnS, CdS, and PbS nano-crystalline.
|
