LIGHT EMITTING DIODE HAVING INDIUM NITRIDE

摘要

PURPOSE: A light emitting diode is provided to improve the crystalline of a p-type nitride semiconductor layer by choosing a p-type InN/InGaN multilayer. CONSTITUTION: An active area(29) of a multiple quantum well structure is formed between a n-type nitride semiconductor layer(27) and a p-type nitride semiconductor layer(33). The active area comprises an InGaN quantum-well layer. A p-type multilayer(31) is formed between the p-type nitride semiconductor layer and the active area. In the p-type multilayer, an InN layer and an InxGa1-xN layer are sequentially laminated, at least 2 times. The p-type impurity density of the p-type InN layer is higher than the p-type impurity density of the InxGa1-xN layer.