| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent collapse of a portion of an active region when forming trenches having narrow opening width. Ž<P>SOLUTION: A charge holding layer 4 and an electrode film 5 are laminated and formed on a silicon substrate 1, and trenches 1a, 1b are formed by collective processing. A silicon oxide film 6 is formed on an upper surface and in the trenches 1a, 1b by a plasma CVD method. A void Va is formed in the narrow trench 1a. The silicon oxide film 6 is etched back to open an upper end of the void Va. In this case, patterning is performed to an upper portion of the trench 1a for allowing the silicon oxide film 6 to remain as a beam section 6a orthogonal to the upper portion of the trench 1a. After this, separation of resist and wet treatment are performed, where collapse can be prevented since the beam section 6a is provided. A polysilazane film is embedded, and is converted to a silicon oxide film 7 by carrying out vapor-cure. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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