| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device that has a trench with a flat bottom face, while inhibiting an increase in dielectric constant. SOLUTION: The method of manufacturing the semiconductor device includes: a step of forming a first insulating film 64 on a processing-target substrate; a step of forming an organic thin film 65 on the first insulating film 64; a step of forming a second insulating film 66 on the organic thin film 65; a step of forming a via hole 71a that penetrates the first insulating film 64, the organic thin film 65, and the second insulating film 66; a step of forming a sacrifice film 68 made of inorganic material on the second insulating film 66 to fill the via hole 71a; a step of forming a resist film 69 having a given pattern on the sacrifice film 68; a step of forming a trench 71b that reaches the top face of the organic thin film 65 following the pattern of the resist film 69; and a step of removing portions, which are within the resist film 69 and organic thin film 65 and exposed to the trench 71b, from the processing-target substrate at the same time. COPYRIGHT: (C)2010,JPO&INPIT
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