发明名称 METALIZED SEMICONDUCTOR SUBSTRATES FOR RAMAN SPECTROSCOPY
摘要 In one aspect, the present invention generally provides methods for fabricating substrates for use in a variety of analytical and/or diagnostic applications. Such a substrate can be generated by exposing a semiconductor surface (e.g., silicon surface) to a plurality of short laser pulses to generate micron-sized, and preferably submicron-sized, structures on the surface. The structured surface can then be coated with a thin metallic layer, e.g., one having a thickness in a range of about 10 nm to about 1000 nm.
申请公布号 US2010171948(A1) 申请公布日期 2010.07.08
申请号 US20090481973 申请日期 2009.06.10
申请人 PRESIDENT AND FELLOWS OF HARVARD COLLEGE 发明人 MAZUR ERIC;DIEBOLD ERIC;EBSTEIN STEVEN
分类号 G01J3/44 主分类号 G01J3/44
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