发明名称 METHOD OF FABRICATING AN INTEGRATED DEVICE
摘要 <p>A method of fabricating an integrated device including a MicroElectroMechanical system (MEMS) and an associated microcircuit is provided. In one embodiment, the method comprises: forming a high temperature capable contact through a dielectric layer to an underlying element of a microcircuit formed adjacent to a MicroElectroMechanical System (MEMS) structure on a substrate; and depositing a layer of conducting material over the dielectric layer, and patterning the layer of conducting material to form a local interconnect (LI) for the microcircuit overlying and electrically coupled to the contact and a bottom electrode for the adjacent MEMS structure. Other embodiments are also provided.</p>
申请公布号 WO2010077998(A1) 申请公布日期 2010.07.08
申请号 WO2009US68337 申请日期 2009.12.16
申请人 SILICON LIGHT MACHINES CORPORATION;LU, JOSHUA;BEACH, GREGORY;PAYNE, ALEXANDER;HUNTER, JAMES 发明人 LU, JOSHUA;BEACH, GREGORY;PAYNE, ALEXANDER;HUNTER, JAMES
分类号 H01L21/00 主分类号 H01L21/00
代理机构 代理人
主权项
地址