| 摘要 |
PURPOSE: A manufacturing method of the image sensor and image sensor makes low the resistance of the contact plug connected to the semiconductor device and ion implantation region. The moving picture of the high definition can be a photograph of taken. CONSTITUTION: A photo diode(110) is formed in the semiconductor substrate(100). The semiconductor device(120) and the first ion implantation region(145) are formed in the semiconductor substrate. The insulating layer is formed on the semiconductor substrate. The insulating layer is etched and a part of the first ion implantation region and semiconductor device exposes. The secondary ion implant region(142) is formed in the partial upper side of the first ion implantation region.
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