| 摘要 |
PURPOSE: A manufacturing method of the semiconductor device is provided to improve the contact resistance and the yielding rate by forming a silicide layer after removing residue foreign material on the gate electrode. CONSTITUTION: The gate electrode(109) is formed on the semiconductor substrate(101). The insulating layer is formed on the top of the semiconductor substrate forming the gate electrode. The insulating layer is etched and the gate spacer(111) is formed in both side wall of the gate electrode. The cleaning process operates in the semiconductor substrate forming gate spacer. The silicide layer(113) is formed on the top of the gate electrode performing cleaning process.
|
