| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve the accuracy of drawing position of a charged particle beam 1b1' radiated to the resist surface 30a of a mask 30 while reducing the time and cost of applying or peeling an antistatic film more than in use of the antistatic film. <P>SOLUTION: In a charged particle beam lithography apparatus 100 for carrying the mask 30 into a vacuum region 11 from an atmospheric pressure region 13, mounting the mask 30 on the stage 1a1 of a drawing chamber 1a, and drawing a pattern on the resist surface 30a of the mask 30 by the charged particle beam 1b1' from a charged particle gun 1b1, before the mask 30 is carried away from the vacuum region 11 to the atmospheric pressure region 13, the charge distribution of a drawn part where the pattern is already drawn by the charged particle beam 1b1' on the resist surface 30a of the mask 30 is measured by a charge distribution measuring means 3b2, and the drawing position correction amount of the charged particle beam 1b1' is calculated on the basis of the charge distribution. <P>COPYRIGHT: (C)2010,JPO&INPIT |
