| 摘要 |
PROBLEM TO BE SOLVED: To form a silicide layer stably on a gate electrode. SOLUTION: A memory cell 100 includes a silicon substrate 10, gate electrodes 12 and 13 arranged on the silicon substrate 10 while adjoining each other, an insulating layer 30 formed between the silicon substrate 10 and the gate electrode 12, and a charge storage layer 26 formed between the silicon substrate 10 and the gate electrode 12, wherein the gate electrode 12 becomes broad at least partially as it recedes from the silicon substrate 10. Since the gate electrode 12 is shaped to become broad at least partially as it recedes from the silicon substrate 10, the silicide layer 45 can be formed stably. COPYRIGHT: (C)2010,JPO&INPIT |
