| 摘要 |
<p>PURPOSE: A flash memory device and a manufacturing method thereof are provided to simplify a memory device manufacturing process by excluding a process of eliminating ah isolation layer in a common source area when forming a common source line. CONSTITUTION: An isolation layer(60) is formed across a common source area in an island shape parallel with a bit line(BL) and defines an active area and a field area in a semiconductor substrate. A floating gate and a control gate(70) are formed on the top of the semiconductor substrate. A common source line is formed by injecting impurity ion into the common source area. Isolation layers are formed separate from each along a word line(WL).</p> |
