| 摘要 |
<p>PURPOSE: A semiconductor device and a method for fabricating the same are provided to minimize the difference between a low voltage element and a high voltage element by forming a plurality of gate patterns on both right and left sidewalls of a trench. CONSTITUTION: An element isolation film(11b) is formed on a semiconductor substrate. A trench is formed in the active region of the semiconductor substrate. A first gate pattern(21) is formed on the inner left sidewall of the trench. A second gate pattern is formed on the inner right sidewall of the trench. A common drain region(24) is formed on the bottom side of the trench. A first source region and a second source region are respectively formed on the left surface and the right surface of the active region which are adjacent to the trench.</p> |
