| 摘要 |
<p>PURPOSE: A manufacturing method of a charge trap type nonvolatile memory device is provided to prevent the reaction between an element isolation layer and an etching barrier layer by forming a reaction preventing layer under the etching barrier layer. CONSTITUTION: A cell structure is formed on a silicon substrate(31). A trench is formed by etching a cell structure and a silicon substrate. An element isolation layer(37) is formed in the trench. A reaction preventing layer and an etching barrier layer are laminated on the silicon substrate. The cell structure and the reaction preventing layer in a peripheral circuit region are removed with a first strip process. The etching barrier layer in a cell region is removed. The reaction preventing layer, a hard mask layer, and a buffer layer in the cell region are removed with a second strip process.</p> |
