| 摘要 |
PURPOSE: A CMOS image sensor and a manufacturing method thereof are provided to prevent particles by coating a planarization layer of an image sensor on a contact part with a solder ball. CONSTITUTION: An interlayer insulation layer includes a metal wiring(120) which is opened on a semiconductor substrate. A color filter array is formed on the side of an interlayer insulation layer. A planarization layer(150) is formed on the interlayer insulation layer adjacent to the metal wiring and the color filter array. A micro lens corresponds to the color filter array on the planarization layer. A solder ball(170) is mounted on the metal wiring to be electrically connected. The planarization layer reduces stress when the solder ball is mounted. |
