发明名称 GAS DISTRIBUTION UNIT AND ATOMIC LAYER DEPOSITION APPARATUS HAVING THE SAME
摘要 PURPOSE: A gas injection part and an atomic layer deposition device thereof are provided to prevent the defect of the thickness and the film quality of a thin film due to the rotation of a substrate or a susceptor by executing a deposition process with a fixed substrate. CONSTITUTION: A source gas spraying part(131) is located in the upper part of a horizontally supported substrate(10). The source gas spraying part sprays source gas(S1,S2) including a source material. A purge gas spraying part(133) sprays purge gas for the purge of the source gas to the substrate. The source gas spraying part comprises a first injection body and a second injection body. The second injection body selectively opens and closes the first flow path with the elevating movement.
申请公布号 KR20100077440(A) 申请公布日期 2010.07.08
申请号 KR20080135372 申请日期 2008.12.29
申请人 K.C.TECH CO., LTD. 发明人 SHIN, IN CHUL;LEE, JAE MIN
分类号 H01L21/205;C23C16/455 主分类号 H01L21/205
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