发明名称 |
GAS DISTRIBUTION UNIT AND ATOMIC LAYER DEPOSITION APPARATUS HAVING THE SAME |
摘要 |
PURPOSE: A gas injection part and an atomic layer deposition device thereof are provided to prevent the defect of the thickness and the film quality of a thin film due to the rotation of a substrate or a susceptor by executing a deposition process with a fixed substrate. CONSTITUTION: A source gas spraying part(131) is located in the upper part of a horizontally supported substrate(10). The source gas spraying part sprays source gas(S1,S2) including a source material. A purge gas spraying part(133) sprays purge gas for the purge of the source gas to the substrate. The source gas spraying part comprises a first injection body and a second injection body. The second injection body selectively opens and closes the first flow path with the elevating movement.
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申请公布号 |
KR20100077440(A) |
申请公布日期 |
2010.07.08 |
申请号 |
KR20080135372 |
申请日期 |
2008.12.29 |
申请人 |
K.C.TECH CO., LTD. |
发明人 |
SHIN, IN CHUL;LEE, JAE MIN |
分类号 |
H01L21/205;C23C16/455 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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