| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To maintain a substrate voltage within a proper range while controlling the substrate voltage in order to adjust a threshold of an MOS transistor. <P>SOLUTION: A semiconductor device 1 includes: a MOS transistor of a threshold adjustment object formed on a semiconductor substrate; a replica transistor of the MOS transistor; a monitor circuit 10 which monitors the voltage between gate sources required for the replica transistor to make a current of a given design value flow; a negative voltage pump circuit 20 which generates a substrate voltage VBB of the MOS transistor based on an output of the monitor circuit 10; and a limiter circuit 30 which specifies the operation of negative voltage pump circuit 20 responding to an effect that the substrate voltage VBB has exceeded a predetermined value irrespective of a monitor result of the monitor circuit 10. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
