| 摘要 |
PROBLEM TO BE SOLVED: To provide a reactive sputtering method by which the compound film of a predetermined metal is formed in a high productivity under the condition of continuing the discharge in a stable transition state without depositing metal film around a sputtering target, and to provide an optical member. SOLUTION: In the reactive sputtering method, an inert gas and a reactive gas are introduced into a vacuum chamber to form the compound film of the sputtering target and the reactive gas on a film forming substrate in the vacuum chamber. The discharge is started in a state that applying voltage is set so as to obtain the transition state with the power-to-be-applied lower than that applied to the sputtering target for predetermined film-forming, and then the introduction amount of the voltage to be applied and the reactive gas are controlled to be shifted to the supplied power and the reactive state of the sputtering target for the desired film-forming while keeping the transition state. COPYRIGHT: (C)2010,JPO&INPIT
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