| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a normally-off field effect semiconductor device having small on resistance and gate leakage current, and to provide a method of manufacturing the normally-off field-effect semiconductor device. Ž<P>SOLUTION: By the method, the field effect semiconductor device is manufactured. The field effect semiconductor device includes: a main semiconductor region, including at least one semiconductor layer for forming a current passage; a first main electrode 6 disposed on one main surface of the main semiconductor region; a second main electrode 7 disposed on one main surface of the main semiconductor region, separately from the first main electrode 6; a gate electrode 8 disposed between the first and second main electrodes on one main surface of the main semiconductor region; and a metal oxide semiconductor film 10, disposed between the main semiconductor region and the gate electrode 8. In this case, a thin film containing a metal material for composing the metal oxide semiconductor film 10 is evaporated onto the main semiconductor region. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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