发明名称 |
Non-volatile memory structure and method of fabrication |
摘要 |
A method for creating a non-volatile memory array includes implanting pocket implants in a substrate at least between mask columns of a given width and at least through an ONO layer covering the substrate, generating increased-width polysilicon columns from the mask columns, generating bit lines in the substrate at least between the increased-width polysilicon columns and depositing oxide at least between the polysilicon columns.
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申请公布号 |
US2010173464(A1) |
申请公布日期 |
2010.07.08 |
申请号 |
US20090654092 |
申请日期 |
2009.12.10 |
申请人 |
LUSKY ELI;SHAPPIR ASSAF;IRANI RUSTOM;EITAN BOAZ |
发明人 |
LUSKY ELI;SHAPPIR ASSAF;IRANI RUSTOM;EITAN BOAZ |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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