| 摘要 |
PROBLEM TO BE SOLVED: To improve an activation ratio of an impurity layer formed on an Si substrate. SOLUTION: This manufacturing method of a semiconductor device includes: a process of forming a gate electrode at the surface side of a first conductivity type silicon substrate via a gate oxide film; a process of forming a second conductivity type base layer in the first conductivity type silicon substrate, and also a first conductivity type emitter layer in the second conductivity type base layer; a process of forming an interlayer insulating film covering the gate electrode, and a surface electrode which passes the interlayer insulating film and contacts with the second conductivity type base layer and the first conductivity type emitter layer; then, a process of grinding the backside of the first conductivity type silicon substrate; and then, a process of activating the impurity layer formed on the ground backside. In this manufacturing method of the semiconductor device, an impurity is ion-implanted into the first conductivity type silicon substrate while a laser pulse whose wavelength is 300 to 600 nm and whose irradiation energy density is 0.4 to 1.4 J/cm<SP>2</SP>is radiated on the first conductivity type silicon substrate, and the impurity layer is activated. COPYRIGHT: (C)2010,JPO&INPIT |
