| 摘要 |
PROBLEM TO BE SOLVED: To provide a reliable semiconductor device including a low-resistance conductive part. SOLUTION: A first conductive layer 38 containing CnMn and a second conductive layer 39 mainly containing Cu are formed via a barrier layer 37 in a via hole 36a and a wiring groove 36b. Low temperature oxidization takes place after cleaning, thereby forming a Cu oxide layer 40 on the surface of the first and second conductive layers 38 and 39. Thereafter, a cap layer is formed, heat treatment at high temperature conditions takes place in this state to diffuse Mn in the first and second conductive layers 38 and 39 into the Cu oxide layer 40, and a compound layer comprising Mn included in the Cu oxide layer 40 is formed at an interface with the cap layer. Thus, Mn in the first and second conductive layers 38 and 39 can be reduced, and furthermore, the adhesion of the cap layer can be improved. COPYRIGHT: (C)2010,JPO&INPIT |
