发明名称 CHEMICAL MECHANICAL POLISHING APPARATUS
摘要 PURPOSE: A chemical mechanical polishing device is provided to accurately measure pressure of compressed air using first and second transducers and to accurately control pressure applied to a wafer. CONSTITUTION: A chemical mechanical polishing device comprises a polishing pad(140), a polishing head(210), a compressed gas supplier(500), first and second pipes(610,620), a rotary union(700), and first and second transducers(910,920). The polishing head is arranged on the polishing pad and fixes a wafer. The compressed gas supplier supplies compressed gas to the polishing head. The first pipe is connected to the compressed gas supplier. The second pipe is connected to the polishing head and is rotated with the polishing head. The rotary union connects the first and second pipes. The first and second transducers are arranged in the first and second pipes, respectively and measure pressure of the compressed gas.
申请公布号 KR20100079475(A) 申请公布日期 2010.07.08
申请号 KR20080137979 申请日期 2008.12.31
申请人 DONGBU HITEK CO., LTD. 发明人 SHIM, WOO JOON
分类号 B24B37/04;H01L21/304 主分类号 B24B37/04
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