发明名称 METHOD AND APPARATUS FOR CHEMICAL MECHANICAL POLISHING
摘要 PURPOSE: A chemical and mechanical polishing device and a polishing method are provided to minimize a thickness difference between the center part and the edge part of a wafer. CONSTITUTION: A chemical and mechanical polishing device(100) comprises a measuring unit(110), a controller, and a polishing unit(120). The measuring unit measures the thickness of the center part and the edge part of a wafer. The controller compares the thickness of the center part with the thickness of the edge part of the wafer. The polishing unit polishes the surface of the wafer.
申请公布号 KR20100079199(A) 申请公布日期 2010.07.08
申请号 KR20080137615 申请日期 2008.12.30
申请人 DONGBU HITEK CO., LTD. 发明人 KIM, HYO SANG
分类号 B24B37/00;B24B37/005;H01L21/304 主分类号 B24B37/00
代理机构 代理人
主权项
地址