MULTIPLE-GATE TRANSISTORS WITH REVERSE T-SHAPED FINS

摘要

PURPOSE: Multiple-gate transistors with reversed T-shape fins are provided to improve an electron mobility and a hole mobility by forming fin field-effect transistor fin using pure germanium. CONSTITUTION: A semiconductor substrate(20) is prepared. A first insulating region is formed to face a second insulating region on the semiconductor substrate. A reversed T-shape epitaxial semiconductor region including a horizontal plate(42) and a fin(40) is formed. The lower surface of the horizontal plate is contacted with the semiconductor substrate. A gate dielectric(46) is formed on the upper side of the sidewall of the fin. A gate electrode(48) is formed on the gate dielectric.